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1 mrf652260 motorola rf device data the rf mosfet line nchannel enhancementmode lateral mosfet designed for broadband commercial and industrial applications at frequen- cies up to 1.0 ghz and specified for the gsm 925 960 mhz band. the high gain and broadband performance of these devices makes them ideal for largesignal, common source amplifier applications in 28 volt base station equipment. ? specified performance @ 960 mhz, 28 volts output power e 60 watts power gain e 12.5 db (min) efficiency e 53% (min) ? 100% tested for load mismatch stress at all phase angles with 5:1 vswr maximum ratings rating symbol value unit drainsource voltage v dss 60 vdc gatesource voltage v gs 20 vdc drain current e continuous i d 7 adc total device dissipation @ t c > = 25 c derate above 25 c p d 118 0.9 watts w/ c storage temperature range t stg 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 1.1 c/w note caution mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf652260/d
semiconductor technical data 60 w, 960 mhz lateral nchannel broadband rf power mosfet case 360b03, style 1 ? motorola, inc. 1999 g d s rev 1
mrf652260 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainsource breakdown voltage (v gs = 0 vdc, i d = 1 m adc) v (br)dss 60 e e vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0) i dss e e 1 m adc gatesource leakage current (v gs = 20 vdc, v ds = 0 ) i gss e e 1 m adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 m adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 400 madc) v gs(q) 3 4 5 vdc drainsource onvoltage (v gs = 10 vdc, i d = 3 adc) v ds(on) e 0.65 0.8 vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs 2.2 2.6 e s dynamic characteristics input capacitance (includes internal input moscap) (v ds = 26 vdc, v gs = 0, f = 1 mhz) c iss e 83 e pf output capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c oss e 44 e pf reverse transfer capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss e 4.3 e pf functional tests (in motorola test fixture) commonsource amplifier power gain (v dd = 28 vdc, p out = 60 w, i dq = 400 ma, f = 960 mhz) g ps 12.5 e e db drain efficiency (v dd = 28 vdc, p out = 60 w, i dq = 400 ma, f = 960 mhz) h 53 e e % output mismatch stress (v dd = 28 vdc, p out = 60 w, i dq = 400 ma, f = 960 mhz, vswr = 5:1, all phase angles) y no degradation in output power before and after test
3 mrf652260 motorola rf device data figure 1. mrf652260 test circuit schematic b1 short rf bead fair rite2743019447 c1 15 pf chip capacitor c2, c3, c6, c9 47 pf chip capacitor c4 100 pf chip capacitor c5, c12 10 m f, 50 vdc electrolytic capacitor c7, c10 1000 pf chip capacitor c8, c11 0.1 m f, 50 vdc chip capacitor c13 470 m f, 50 vdc electrolytic capacitor c14 0.2 pf, chip capacitor r1 r2 r3 c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 c11 l1 b1 dut c13 c12 tl1 tl2 tl3 tl4 rf input rf output v gg v dd c15 1.2 pf, chip capacitor l1 5 turns, 20 awg, idia 0.126 r1 10 k w , 1/4 w resistor r2 13 k w , 1/4 w resistor r3 1.0 k w , 1/4 w chip resistor tl1tl4 microstrip line ckt board 1/32 glass teflon ? , e r = 2.55 arlongx03005522 c15 c14
mrf652260 4 motorola rf device data typical characteristics p , output power (watts) out p , output power (watts) out p in , input power (watts) 800 90 f, frequency (mhz) 70 0 50 20 0 820 840 860 880 920 1000 0.5 1.5 2.5 3.5 60 50 40 20 0 70 10 30 1.0 2.0 3.0 v dd , supply voltage (volts) 0 16 p out , output power (watts) figure 2. power gain versus output power figure 3. output power versus supply voltage 80 15 12 10 100 18 22 30 32 70 60 50 40 30 14 13 20 26 0 6 v ds , drain voltage (vdc) i , drain current (amps) 5 0 5 10152025 35 4 3 1 d figure 4. output power versus frequency figure 5. output power versus input power figure 6. dc safe operating area 900 960 2 v dd = 28 vdc f = 960 mhz v dd = 28 vdc i dq = 400 ma single tone 12 14 20 0 10 16 v dd = 28 vdc i dq = 400 ma f = 960 mhz t j = 150 c t f = 70 c h p out g ps , power gain (db) i dq = 600 ma 400 ma 250 ma 100 ma 24 28 p , output power (watts) out 80 40 60 940 980 p in = 4.0 w 2.0 w 1.0 w p in = 2.5 w 1.0 w 0.5 w 30 60 30 0 50 40 10 h , efficiency (%) 20 30 10 v dd = 28 vdc i dq = 400 ma f = 960 mhz figure 7. drain current versus gate voltage i d , drain current (ma) 4 3 2 0 01 3 5 6 v gs , gate voltage (volts) v ds = 28 vdc typical device shown 24 3.5 2.5 1 0.5 1.5
5 mrf652260 motorola rf device data typical characteristics figure 8. capacitance versus voltage 140 100 60 0 0102030 50 v ds , drainsource voltage (volts) c, capacitance (pf) v gs = 0 vdc f = 1.0 mhz 20 51525 4045 35 c iss c oss c rss 80 40 120
mrf652260 6 motorola rf device data broadband circuit application (as shown in application note an1670/d, a60 watts, gsm 900 mhz, ldmos twostage amplifiero) figure 9. gsm 900 amplifier schematic 10 mm 6.20 mm 50.00 mm 2.60 mm holes (for m2.5 screws) pcb: gi180 thickness 0.80 mm top metal solder stencil figure 10. pcb layout c1 5.6 pf (avx accup) c2, c3 15 pf (avx accup) c4, c5 10 pf (avx accup) c6 2.7 pf (avx accup) rf input rf output v bias mrf184 c8 r1 c1 r2 c3 c2 v dd c9 c7 c5 c4 c6 c7 2.2 pf (avx accup) c8, c9 470 pf (npo) r1 3.9 k w r2 1 k w
7 mrf652260 motorola rf device data broadband circuit application (as shown in application note an1670/d, a60 watts, gsm 900 mhz, ldmos twostage amplifiero) figure 11. component parts layout 50 mm c1 r1 r2 c8 c3 c2 bias tuning mrf184 c4 c5 c7 c6 c9 mrf184 gsm/25 v jj bouny 02/98 figure 12. performance in broadband circuit (at small signal) f, frequency (mhz) 16 820 860 940 1060 14 12 10 6 4 900 980 1020 0 5 10 input vswr (db) 8 v dd = 26 v i dq = 350 ma g ps , power gain (db) 15 20 25 30
mrf652260 8 motorola rf device data f mhz s 11 s 22 900 920 940 0.66 + j4.71 0.61 + j4.89 0.64 + j4.79 2.41 + j2.91 2.32 + j2.94 2.26 + j3.02 960 980 0.59 + j5.03 0.58 + j4.97 2.23 + j3.05 2.22 + j3.27 z in ohms z out ohms 0.60 j0.93 0.57 j0.82 0.59 j0.88 1.48 j0.82 1.50 j0.77 1.62 j0.71 0.55 j0.66 0.56 j0.73 1.79 j0.60 1.82 j0.49 26 v, 70 watts 900 mhz z o = 10 w z in z out 980 mhz f = 900 mhz 980 mhz figure 13. input and output impedances mrf652260 mrf652260 z in = conjugate of source impedance. z out = conjugate of the load impedance at a given output power, voltage, frequency and efficiency. g d s z load z source
9 mrf652260 motorola rf device data notes
mrf652260 10 motorola rf device data notes
11 mrf652260 motorola rf device data notes
mrf652260 12 motorola rf device data package dimensions case 360b03 issue d g k d e h n f c seating plane dim a min max min max millimeters 0.790 0.810 20.07 20.57 inches b 0.220 0.240 5.59 6.09 c 0.125 0.175 3.18 4.45 d 0.205 0.225 5.21 5.71 e 0.050 0.070 1.27 1.77 f 0.004 0.006 0.11 0.15 g 0.562 bsc 14.27 bsc h 0.077 0.087 1.96 2.21 k 0.215 0.255 5.47 6.47 n 0.350 0.370 8.89 9.39 q 0.120 0.140 3.05 3.55 style 1: pin 1. drain 2. gate 3. source 1 2 3 q 2 pl m a m 0.25 (0.010) b m t b a t notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension h is measured 0.030o away from edge of flange. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : motorola japan ltd.; spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 4321 nishigotanda, shinagawaku, tokyo, japan. 81354878488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com touchtone 1 6022446609 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, motorola fax back system us & canada only 18007741848 2, dai king street, tai po industrial estate, tai po, n.t., hong kong. http://sps.motorola.com/mfax/ 85226668334 home page : http://motorola.com/sps/ mrf652260/d

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